Time-resolved studies of rapid solidification in highly undercooled molten silicon
Technical Report
·
OSTI ID:5994556
A KrF (248 nm) pulsed laser was used to melt 90-, 190-, and 440-nm thick amorphous silicon layers produced by Si ion implantation into (100) crystalline Si substrates. Time-resolved reflectivity measurements at two different probe wavelengths (633 nm and 1.15 ..mu..m) and post-irradiation TEM measurements were used to study the formation of an undercooled liquid Si phase and the subsequent solidification processes. The time-resolved measuremetns provide new experimental information about the nucleation of fine-grained Si crystallites in undercooled liquid Si, at low laser energy densities (E/sub l/), and about the growth of large-grained Si in the near-surface region at higher E/sub l/. Measurements with the infrared probe beam reveal the presence of a buried, propagating liquid layer at low E/sub l/. Model calculations indicate that this liquid layer is generated in part by the release of latent heat associated with the nucleation and growth process. 8 references, 4 figures.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5994556
- Report Number(s):
- CONF-841157-47; ON: DE85004857
- Country of Publication:
- United States
- Language:
- English
Similar Records
Time resolved studies of rapid solidification in highly undercooled molten silicon
Solidification of highly undercooled liquid silicon produced by pulsed laser melting of ion-implanted amorphous silicon: Time-resolved and microstructural studies
Time-resolved studies of ultrarapid solidification of highly undercooled molten silicon formed by pulsed laser irradiation
Journal Article
·
Mon Dec 31 23:00:00 EST 1984
· Mater. Res. Soc. Symp. Proc.; (United States)
·
OSTI ID:6947346
Solidification of highly undercooled liquid silicon produced by pulsed laser melting of ion-implanted amorphous silicon: Time-resolved and microstructural studies
Journal Article
·
Tue Sep 01 00:00:00 EDT 1987
· J. Mat. Res.; (United States)
·
OSTI ID:6254259
Time-resolved studies of ultrarapid solidification of highly undercooled molten silicon formed by pulsed laser irradiation
Conference
·
Fri Jul 20 00:00:00 EDT 1984
·
OSTI ID:6885640
Related Subjects
36 MATERIALS SCIENCE
360304 -- Composite Materials-- Physical Properties-- (-1987)
360605* -- Materials-- Radiation Effects
DATA
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
EXPERIMENTAL DATA
FLUORIDES
FLUORINE COMPOUNDS
GRAIN GROWTH
HALIDES
HALOGEN COMPOUNDS
INFORMATION
ION IMPLANTATION
KRYPTON COMPOUNDS
KRYPTON FLUORIDES
LASER RADIATION
MICROSCOPY
NUCLEATION
NUMERICAL DATA
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PULSE TECHNIQUES
RADIATION EFFECTS
RADIATIONS
RARE GAS COMPOUNDS
REFLECTIVITY
SEMIMETALS
SILICON
SOLIDIFICATION
SURFACE PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY
360304 -- Composite Materials-- Physical Properties-- (-1987)
360605* -- Materials-- Radiation Effects
DATA
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
EXPERIMENTAL DATA
FLUORIDES
FLUORINE COMPOUNDS
GRAIN GROWTH
HALIDES
HALOGEN COMPOUNDS
INFORMATION
ION IMPLANTATION
KRYPTON COMPOUNDS
KRYPTON FLUORIDES
LASER RADIATION
MICROSCOPY
NUCLEATION
NUMERICAL DATA
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PULSE TECHNIQUES
RADIATION EFFECTS
RADIATIONS
RARE GAS COMPOUNDS
REFLECTIVITY
SEMIMETALS
SILICON
SOLIDIFICATION
SURFACE PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY