Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29269· OSTI ID:5851744

Asada, S; Sugou, S; Kasahara, K; Kumashiro, S

An effective device structure for reducing leakage current in buried heterostructure laser diodes with semiinsulating InP blocking layers has been analyzed with the use of a semiconductor device simulator in which deep trap levels are taken into account. Adding a thin wide-bandgap InGaP layer in the semiinsulating region at the mesa boundaries as a barrier to prevent double injection into the semiinsulating region is predicted to be markedly effective in reducing leakage current.

• Research Organization: Opto-Electronics Research Lab., NEC Corp., Kawasaki 213 (JP); VLSI CAD Engineering Div. NEC Corp., Kawasaki (JP)
• OSTI ID: 5851744
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANALOG SYSTEMS
CURRENTS
DESIGN
ELECTRIC CURRENTS
FUNCTIONAL MODELS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
LEAKAGE CURRENT
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SIMULATORS
SOLID STATE LASERS