Semi-insulating current blocking property simulations for buried heterostructure laser diodes

Journal Article · Sun Feb 28 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99352· OSTI ID:5484910

Asada, S; Sugou, S; Kasahara, K; Kato, Y; Kumashiro, S

A compound-semiconductor device simulator, in which deep levels in the semi-insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi-insulating InP buried heterostructure laser diodes were investigated. The leakage current, without passing through the active region, was found to be small when the trap density in the semi-insulating InP layers is more than 3 x 10/sup 15/ cm/sup -3/ and less than 1 x 10/sup 16/ cm/sup -3/. This simulator will be a useful tool in predicting the semi-insulating properties of electrical and optical semiconductor devices.

• Research Organization: Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki 213, Japan
• OSTI ID: 5484910
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LEAKAGE CURRENT
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SIMULATION
THEORETICAL DATA
TRAPPING
TRAPS