Investigation of the photoelectric characteristics of high-resistivity silicon photoconverters

Journal Article · Sun Jan 01 04:00:00 EST 1978 · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)

OSTI ID:5848711

Bordina, N M; Golovner, T M; Grigor'eva, G M; Zvyagina, K N; Kreinin, L B; Milovanova, N A

The results of a theoretical and experimental analysis of the dependence of the fundamental operation parameters of photoconverters made of high-resistance silicon (the photo-emf, the short-circuit current, and the spectral distribution of the photosensitivity) on the thickness of the doped layer and the i-layer, the charge-carrier diffusion length, and the direction of illumination are presented. The conditions under which high conversion efficiency of the light can be achieved are determined. The part played by the Dember volume emf is determined, and the conclusion that it is preferable to illuminate a high-resistance silicon photo-converter from the side of the p-layer is verified. The photo emf of the photo-converters investigated reaches 580 mV, and can obviously be increased by reducing the thickness of the i-layer.

• OSTI ID: 5848711
• Journal Information: Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Vol. 14:6; ISSN ASOEA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHARGE CARRIERS
CURRENTS
DEMBER EFFECT
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRICAL TESTING
JUNCTIONS
MATERIALS TESTING
MATHEMATICAL MODELS
NONDESTRUCTIVE TESTING
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS
SPECTRAL RESPONSE
TESTING