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Study of photoelectric characteristics of silicon epitaxial p-i-n photoconverters in a wide illumination range

Journal Article · · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)
OSTI ID:5624430
; ; ;
Silicon epitaxial p-i-n photoconverters are fabricated and their energy characteristics are studied in a wide illumination range. Marked deterioration of the element parameters with increase of the illumination levels is shown experimentally. This deterioration is basically explained by the specimen temperature increase at high illuminations.
Research Organization:
Physical-Technical Inst., Tashkent, USSR
OSTI ID:
5624430
Journal Information:
Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Vol. 13:6; ISSN ASOEA
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
EPITAXY
FLUX DENSITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADIANT FLUX DENSITY
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR FLUX
TEMPERATURE DEPENDENCE