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Temperature characteristics of silicon photoconverters

Journal Article · · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)
OSTI ID:7177563
A method is proposed for the experimental investigation of the temperature dependence of the short-circuit current and the efficiency of a photoconverter when the illuminating radiation has an arbitrary spectral composition. The method involves the reduction of the results to the ''extra-atmospheric'' sun. The apparatus used to investigate photoconverters in the temperature range 100 to 400/sup 0/K is described. The temperature characteristics of Soviet silicon photoconverters are discussed. The temperature coefficient of the short-circuit current for a photoconverter exposed to the extra-atmospheric sun is approximately 42 ..mu..A/cm/sup 2//deg (0.15 percent/deg). The open-circuit voltage of the photoconverter increases with decreasing temperature in accordance with a linear law with a temperature coefficient of about -1.6 mV/deg (0.28 percent/deg).
OSTI ID:
7177563
Journal Information:
Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Vol. 11:5/6; ISSN ASOEA
Country of Publication:
United States
Language:
English

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