Determining the minority-carrier diffusion length in the base of silicon photoconverters

Journal Article · Sat Jan 01 04:00:00 EST 1977 · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)

OSTI ID:5385451

Bordina, N M; Golovner, T M

Methods are considered for determining the minority-carrier diffusion length (L) in the base of a thin silicon photoconverter from the spectral sensitivity. Curves are given that permit L to be determined from the measured carrier collection factor under long-wave illumination (0.95 and 1.0 ..mu..m) and the photoconverter thickness. It is shown that when the rear surface of the base is open and the recombination rate is low at this surface it is significantly easier to determine L if the photoconverter is illuminated from the rear. Experimental data are given.

• OSTI ID: 5385451
• Journal Information: Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Vol. 13:1; ISSN ASOEA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHARGE CARRIERS
CHARGE COLLECTION
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
JUNCTIONS
MEASURING METHODS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SENSITIVITY
SILICON SOLAR CELLS
SOLAR CELLS
SPECTRAL RESPONSE
SURFACES