Determination of minority-carrier diffusion length in a p-silicon wafer by photocurrent generation method

Journal Article · Sat Nov 15 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337610· OSTI ID:5294227

Sharma, S K; Singh, S N; Chakravarty, B C; Das, B K

A nondestructive method to determine the diffusion length of minority carriers in a p-silicon wafer is outlined. This novel method is based on creating an accumulation layer on one side and an inversion layer on the other side of the wafer by depositing thin semitransparent layers of high (e.g., palladium) and low (e.g., aluminum) workfunction metals, respectively. The wafer acquires a structure akin to p/sup +/-p-n/sup +/ and is capable of generating a photocurrent when illuminated. The photocurrent I/sub sc/ (where sc represents short circuit) as a function of the intensity P/sub in/ of a monochromatic radiation incident on the accumulation layer (p/sup +/) side of the wafer is measured. The diffusion length L is determined from the slope of the J/sub sc/ vs P/sub in/ curve. The values of L so determined were compared with that determined from the measurement of spectral response by illuminating the wafer from the inversion layer (n/sup +/) side and were found to be in excellent agreement.

• Research Organization: Division of Materials, National Physical Laboratory, New Delhi-110012, India
• OSTI ID: 5294227
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHARGE CARRIERS
CURRENTS
DIFFUSION
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
ELECTRICAL FAULTS
ELEMENTS
EQUIPMENT
LENGTH
MEASURING METHODS
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT