Measurement of electron diffusion lengths in ITO/p-InP by surface photocurrents

Journal Article · Sat Oct 01 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341491· OSTI ID:6842762

Hanak, T; Ahrenkiel, R K

The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 ..mu..m for highly absorbed light up to about 8.0 ..mu..m for deeply penetrating light.

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80401
• OSTI ID: 6842762
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHALCOGENIDES
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
CURRENTS
DATA
DIFFUSION LENGTH
DIMENSIONS
ELECTRIC CURRENTS
EXPERIMENTAL DATA
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM OXIDES
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LENGTH
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCURRENTS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
TIN COMPOUNDS
TIN OXIDES