Electron diffusion lengths in p-type InP involved in indium tin oxide/p-InP solar cells

Journal Article · Fri Oct 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.330048· OSTI ID:6748187

Gouskov, L; Luquet, H; Soonckindt, L; Oemry, A; Boustani, M; Nguyen, P H

Electron diffusion length measurements have been performed in p-type InP by different methods: Surface photovoltage, spectrum analysis of the photocurrent in an Indium Tin Oxide/p-InP diode, variation of the photovoltage in this diode versus reverse voltage, Electron Beam Induced Current measurements. The results are compared and discussed in detail. A double p-type region model with different electron diffusion lengths has been proposed to explain the experimental results.

• Research Organization: Universite des Sciences et Techniques du Languedoc, Centre d'Etudes d'Electronique des Solides, associe au CNRS, Place E. Bataillon, 34060-Montpellier-Cedex, France
• OSTI ID: 6748187
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BEAMS
DATA
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC POTENTIAL
ELECTRON BEAMS
ELECTRONS
ELEMENTARY PARTICLES
EQUIPMENT
EXPERIMENTAL DATA
FERMIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LENGTH
LEPTON BEAMS
LEPTONS
MATERIALS
MATHEMATICAL MODELS
NUMERICAL DATA
OXYGEN COMPOUNDS
P-TYPE CONDUCTORS
PARTICLE BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA
STANNATES
TIN COMPOUNDS