Z-contrast imaging and electron channeling analysis of dopants in semiconductors
Conference
·
OSTI ID:5848413
The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5848413
- Report Number(s):
- CONF-8503131-2; ON: DE85011410
- Country of Publication:
- United States
- Language:
- English
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