High resolution Z-contrast imaging and lattice location analysis of dopants in ion-implanted silicon
Journal Article
·
· Mater. Res. Soc. Symp. Proc.; (United States)
OSTI ID:6922596
Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substantial fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects. 8 references, 8 figures.
- Research Organization:
- Oak Ridge National Lab., TN
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6922596
- Journal Information:
- Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 41; ISSN MRSPD
- Country of Publication:
- United States
- Language:
- English
Similar Records
High resolution Z-contrast imaging and lattice location analysis of dopants in ion-implanted silicon
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Conference
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Fri Nov 30 23:00:00 EST 1984
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OSTI ID:6188733
Direct imaging of dopant distributions in silicon by scanning transmission electron microscopy
Journal Article
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Wed Aug 15 00:00:00 EDT 1984
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Z-contrast imaging of dopant precipitation and redistribution during solid and liquid phase epitaxial growth of ion-implanted Si
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Wed Jul 01 00:00:00 EDT 1987
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OSTI ID:6296794
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
IMAGES
MATERIALS
MICROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESOLUTION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLUBILITY
360605* -- Materials-- Radiation Effects
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
IMAGES
MATERIALS
MICROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESOLUTION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLUBILITY