Z-contrast imaging of dopant precipitation and redistribution during solid and liquid phase epitaxial growth of ion-implanted Si
Conference
·
OSTI ID:6296794
Z-contrast STEM using a high angle annular detector has been used to study precipitation and redistribution of dopant during solid and liquid phase epitaxial growth of In and Sb implanted Si. Both the pile-up phenomenon seen during solid phase regrowth and the long-range redistribution of dopant accompanying amorphous to polycrystalline transformation have been directly linked to the presence of highly mobile liquid precipitates. Quantitative Z-contrast imaging has been used to study the dopant distribution between cell walls following pulsed laser annealing. The potential of Z-contrast STEM for providing high resolution atomic structure imaging with high elemental sensitivity is discussed.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6296794
- Report Number(s):
- CONF-870462-1-Draft; ON: DE87012534
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANTIMONY IONS
CHARGED PARTICLES
CRYSTALLIZATION
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EPITAXY
IMAGES
INDIUM IONS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
MATERIALS
MICROSCOPY
PHASE TRANSFORMATIONS
SEMIMETALS
SILICON
360605* -- Materials-- Radiation Effects
ANTIMONY IONS
CHARGED PARTICLES
CRYSTALLIZATION
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EPITAXY
IMAGES
INDIUM IONS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
MATERIALS
MICROSCOPY
PHASE TRANSFORMATIONS
SEMIMETALS
SILICON