High resolution Z-contrast imaging and lattice location analysis of dopants in ion-implanted silicon
Conference
·
OSTI ID:6188733
Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substitutional fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects. 8 references, 8 figures.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6188733
- Report Number(s):
- CONF-841157-57; ON: DE85005261
- Country of Publication:
- United States
- Language:
- English
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