Atom location by electron channeling analysis

Conference · Sun Jul 01 04:00:00 EDT 1984

OSTI ID:6089985

Pennycook, S J

For many years the orientation dependence of the characteristic x-ray emission close to a Bragg reflection has been regarded as a hindrance to accurate microanalysis, and a random incident beam direction has always been recommended for accurate composition analysis. However, this orientation dependence can be put to use to extract information on the lattice location of foreign atoms within the crystalline matrix. Here a generalization of the technique is described which is applicable to any crystal structure including monatomic crystals, and can quantitatively determine substitutional fractions of impurities. The technique was referred to as electron channeling analysis, by analogy with the closely related and widely used bulk technique of ion channeling analysis, and was developed for lattice location studies of dopants in semiconductors at high spatial resolution. Only two spectra are required for each channeling analysis, one in each of the channeling conditions described above. If the matrix and dopant x-ray yields vary identically between the two orientations then the dopant necessarily lies within the reflecting matrix planes. If the dopant x-ray yield does not vary the dopant atoms are randomly located with respect to the matrix planes. 10 references, 2 figures.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6089985
• Report Number(s): CONF-840767-17-Draft; ON: DE85007549
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHANNELING
CHEMICAL ANALYSIS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DISTRIBUTION
ELECTRON CHANNELING
ELECTRON MICROPROBE ANALYSIS
IMPURITIES
MICROANALYSIS
SPATIAL DISTRIBUTION
SPECTRA
X-RAY SPECTRA