Static contrast enhancement layer for photolithographic processes

Patent Application · Wed Nov 01 00:00:00 EST 1989

OSTI ID:5843430

Renschler, C L

In the ever expanding microelectronic industry, there is a constant demand for improved photolithographic techniques useful in the manufacture of integrated circuits and the like. Over the years, however, the linewidths of structures patterned for microelectronic fabrication have continued to decrease. At present, 0.8 {mu}m lines and spaces are now imaged in commercial production and much smaller features are predicted for the near future. These feature sizes represent a significant drop below the previously predicted limit of optical lithography, originally thought to be around 1.25 {mu}m. These advances have been due in large part to the extensive worldwide research effort in improved optical patterning techniques. One of the more significant developments in optical patterning has been the advent of contrast enhancement layer lithography. A static stable contrast enhancement layer is provided for improving the resolution possible in photolithographic processes which comprises a photoacid generator such as an onium salt and acid-base indicator dye such as methyl yellow incorporated into a polymeric binder. The contrast enhancement layer is coated onto a conventional photoresist, and upon exposure to light in the appropriate absorption range, the salt undergoes a transformation to a strong Bronsted acid which will then bleach the indicator dye. The system is particularly designed so that an in situ contact mask is formed in a first deep UV exposure which is used to mask light projected upon the photoresist at a second wavelength. The present invention allows for exposure using deep UV sources without the need for the development of new photoresist chemistry. 1 fig.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (USA)
• DOE Contract Number: AC04-76DP00789
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7430202
• Application Number: ON: DE91011673; PPN: US 7-430202
• OSTI ID: 5843430
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
INTEGRATED CIRCUITS
FABRICATION
SALTS
PHOTOSENSITIVITY
ANTIMONATES
BROENSTED ACIDS
COMPOSITE MATERIALS
DYES
FLUORINE COMPOUNDS
INDICATORS
INVENTIONS
LAYERS
MICROELECTRONICS
PHOTOCHEMICAL REACTIONS
POLYMERS
SPATIAL RESOLUTION
SULFUR COMPOUNDS
ULTRAVIOLET RADIATION
ANTIMONY COMPOUNDS
CHEMICAL REACTIONS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
HALOGEN COMPOUNDS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
MATERIALS
MICROELECTRONIC CIRCUITS
OXYGEN COMPOUNDS
RADIATIONS
RESOLUTION
SENSITIVITY
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
400500 - Photochemistry