VUV lithography

Patent Application · Tue Jan 09 00:00:00 EST 1990

OSTI ID:5752952

George, E V; Oster, Y; Mundinger, D C

Deep uv projection lithography can be performed using an e-beam pumped solid excimer uv source, a mask, and a uv reduction camera. The uv source produces deep uv radiation in the range 1700--1300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The uv reduction camera utilizes multilayer mirrors having high reflectivity at the uv wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 5 figs.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (USA)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7462251
• Application Number: ON: DE91011564; PPN: US 7-462251
• OSTI ID: 5752952
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
37 INORGANIC
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PHYSICAL AND ANALYTICAL CHEMISTRY
INTEGRATED CIRCUITS
FABRICATION
CRYOGENICS
DESIGN
ELECTRON BEAMS
FAR ULTRAVIOLET RADIATION
FLUORESCENCE
IMAGES
OPTICAL EQUIPMENT
RARE GASES
SEMICONDUCTOR MATERIALS
BEAMS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FLUIDS
GASES
LEPTON BEAMS
LUMINESCENCE
MATERIALS
MICROELECTRONIC CIRCUITS
NONMETALS
PARTICLE BEAMS
RADIATIONS
ULTRAVIOLET RADIATION
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360601 - Other Materials- Preparation & Manufacture
400500 - Photochemistry