Total-dose and charge-trapping effects in gate oxides for CMOS LSI devices
Journal Article
·
· IEEE Trans. Nucl. Sci.; (United States)
The effect of gamma irradiation on CMOS devices fabricated using 3 Micron CMOS BULK process has been studied as a function of gate oxide processing and subsequent annealing. Threshold shifts, speed degradation, and power supply currents were measured as a function of total dose up to 10/sup 6/ Rad (Si). Using hot electron injection techniques, trapping densities and capture cross-sections of the traps in each oxide type have been determined at pre- and post-irradiation levels. Power supply leakage and speed performance of the devices were recovered within three to five hours by annealing them at 125/sup 0/C, +10 V bias.
- Research Organization:
- General Electric Company, Aerospace Electronic Systems Department, Utica, NY 13501
- OSTI ID:
- 5832879
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BEAMS
CAPTURE
CHALCOGENIDES
CROSS SECTIONS
CURRENTS
DENSITY
DOSE RATES
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
GAMMA RADIATION
HEAT TREATMENTS
IONIZING RADIATIONS
IRRADIATION
LEAKAGE CURRENT
LEPTON BEAMS
MEDIUM TEMPERATURE
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POST-IRRADIATION EXAMINATION
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPPING
TRAPS
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BEAMS
CAPTURE
CHALCOGENIDES
CROSS SECTIONS
CURRENTS
DENSITY
DOSE RATES
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
GAMMA RADIATION
HEAT TREATMENTS
IONIZING RADIATIONS
IRRADIATION
LEAKAGE CURRENT
LEPTON BEAMS
MEDIUM TEMPERATURE
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POST-IRRADIATION EXAMINATION
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPPING
TRAPS