Total-dose and charge-trapping effects in gate oxides for CMOS LSI devices

Journal Article · Sat Dec 01 00:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333541· OSTI ID:5832879

Singh, R S; Kaputa, D J; Korman, C S; Surowiec, E P

The effect of gamma irradiation on CMOS devices fabricated using 3 Micron CMOS BULK process has been studied as a function of gate oxide processing and subsequent annealing. Threshold shifts, speed degradation, and power supply currents were measured as a function of total dose up to 10/sup 6/ Rad (Si). Using hot electron injection techniques, trapping densities and capture cross-sections of the traps in each oxide type have been determined at pre- and post-irradiation levels. Power supply leakage and speed performance of the devices were recovered within three to five hours by annealing them at 125/sup 0/C, +10 V bias.

• Research Organization: General Electric Company, Aerospace Electronic Systems Department, Utica, NY 13501
• OSTI ID: 5832879
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
ANNEALING
CAPTURE
CROSS SECTIONS
DENSITY
DOSE RATES
ELECTRIC CURRENTS
ELECTRON BEAMS
GAMMA RADIATION
IRRADIATION
LEAKAGE CURRENT
MEDIUM TEMPERATURE
OXIDES
POST-IRRADIATION EXAMINATION
TRAPPING
TRAPS
BEAMS
CHALCOGENIDES
CURRENTS
ELECTROMAGNETIC RADIATION
HEAT TREATMENTS
IONIZING RADIATIONS
LEPTON BEAMS
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL PROPERTIES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems