Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon
- Belarusian State Univ. of Informatics and Radioelectronics, Minsk (Belarus). Lab. of Porous Silicon
- Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium). Microelectronics Lab.
The electrical characteristics of complementary metal-oxide-semiconductor (CMOS) transistors and ring oscillators fabricated in porous silicon silicon-on-insulator (SOI) structures are presented before and after gamma irradiation. P-channel SOI/MOS transistors exhibit a front-gate threshold voltage shift of {minus}0.2 and {minus}0.55 V after exposure to doses of 1 and 10 Mrad(Si), respectively, under floating bias conditions, which are different from worst case conditions. For n-channel transistors the corresponding values are {minus}0.1 and {minus}0.2 V. The additional bottom and sidewall B{sup +} ion implants with a dose of 2 {times} 10{sup 13} cm{sup {minus}2} are found to be effective to prevent leakage current along the n-channel transistor bottom and sidewalls. SOI/CMOS ring oscillators present a 40% higher speed in comparison with the same bulk CMOS devices and continued stable operation under a supply voltage of 3--5.5 V, for gamma irradiation up to 10 Mrad(Si), and an operating temperature ranging from 77 to 400 K.
- Sponsoring Organization:
- North Atlantic Treaty Organization, Brussels (Belgium)
- OSTI ID:
- 562059
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 5 Vol. 44; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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