Freeze-out characterization of radiation hardened N + polysilicon gate CMOS transistors
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5825970
- Harris Corp., Melbourne, FL (United States). Semiconductor Sector
- Florida Inst. of Tech., Melbourne, FL (United States)
In this paper freeze-out behavior of radiation hardened N + polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential and applied body-to-source potential. Based on experimental results of this work, freeze-out is not significantly affected by irradiation dose, or the magnitude of the gate bias during radiation.
- OSTI ID:
- 5825970
- Report Number(s):
- CONF-910751--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTALS
DOSE RATES
ELECTRODES
ELEMENTS
ENERGY
HARDENING
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
THRESHOLD ENERGY
TRANSISTORS
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTALS
DOSE RATES
ELECTRODES
ELEMENTS
ENERGY
HARDENING
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
THRESHOLD ENERGY
TRANSISTORS