Freeze-out characterization of radiation-hardened N+ polysilicon-gate CMOS transistors
Freeze-out characteristics of radiation hardened N+ polysilicon-gate CMOS devices was studied at liquid-nitrogen temperature before and after irradiation. Characterization was performed at room temperature, 77 K, and at 77 K with total dose up to 200 Krads(Si), with a gate bias from {minus}4.5V to +6V. explanations are given for the threshold variations and freeze-out effects both before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential, and applied body potential. A kink appears in the transfer characteristics at 77 K pre-rad, and appears to be reduced with increasing total dose. Experimental results indicate that the reduction of the freeze-out kink with total dose is not due to changes in freeze-out with dose or gate bias, but to smearing of the transfer curves as a result of transconductance degradation with total dose.
- Research Organization:
- Florida Inst. of Tech., Melbourne, FL (United States)
- OSTI ID:
- 5328617
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HARDENING
MATERIALS
MOS TRANSISTORS
N-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TEMPERATURE EFFECTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS