Performance of polysilicon gate CMOS devices in space and SDI environments
Conference
·
OSTI ID:5500485
The purpose of this work is to investigate the radiation response of state-of-the-art hardened polysilicon gate CMOS devices in space and SDI environments. To simulate the different radiation evnironments both very high and very low dose rate sources will be used. The results will be examined from the basic mechanisms involved which will be correlated to device functionality. In addition, we also will examine the radiation responses of devices exposed to large, short duration pulses after having been previously irradiated at much lower dose rates.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5500485
- Report Number(s):
- SAND-86-0845C; CONF-860966-1; ON: DE86009025
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COSMIC NUCLEI
COSMIC RADIATION
ELECTRONIC CIRCUITS
IONIZING RADIATIONS
LOGIC CIRCUITS
MATERIALS
NUCLEI
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COSMIC NUCLEI
COSMIC RADIATION
ELECTRONIC CIRCUITS
IONIZING RADIATIONS
LOGIC CIRCUITS
MATERIALS
NUCLEI
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS