Mechanisms for interface-trap generation in polysilicon gate devices

Conference · Wed Dec 31 23:00:00 EST 1986

OSTI ID:6506843

Schwank, J R; Winokur, P S; Dressendorfer, P V; Turpin, D C; Sanders, D T

Interface-traps have been measured on transistors immediately after a pulse of ionizing radiation using a fast subthreshold I-V technique. Results are presented for interface-trap generation as a function of temperature and for different process conditions. These studies more clearly identify the physical mechanisms of interface-trap generation for polysilicon gate CMOS devices.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6506843
• Report Number(s): SAND-87-0285C; CONF-870724-7; ON: DE87005842
• Country of Publication: United States
• Language: English

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