Interface-state generation in polysilicon gate devices
Conference
·
OSTI ID:5737058
The time dependence of interface-state generation in polysilicon gate MOS devices has been investigated. Interface-states have been detected milliseconds after irradiation, indicating more than one mechanism may be responsible for interface-state generation.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5737058
- Report Number(s):
- SAND-86-0308C; CONF-860706-3; ON: DE86006459
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
ELEMENTS
GATING CIRCUITS
INTERFACES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
ELEMENTS
GATING CIRCUITS
INTERFACES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON