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The role of hydrogen in radiation-induced defect formation in polysilicon gate MOS devices

Conference ·
OSTI ID:6016030
; ; ; ; ;
The role of hydrogen in the generation of radiation-induced interface-trap and oxide-trapped charge in MOS polysilicon gate capacitors has been investigated. The concentration of radiation-induced interface-trap and oxide-trapped charge measured both immediately after irradiation and after postirradiation anneal increases if high temperature anneals are performed in hydrogen. We have analyzed these results in the context of several models of interface-trap and oxide-trapped charge formation. The mutual increase in the concentration of oxide-trapped charge and the early-time (1 msec to 10 sec) component of interface-trap charge with the amount of hydrogen used during processing suggests that the breaking of Si-H or Si-OH bonds may be responsible for much of the defect formation at or near the silicon/silicon dioxide interface. 29 refs., 7 figs.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6016030
Report Number(s):
SAND-87-0285C; CONF-870724-7; ON: DE87012374
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
CAPACITORS
CHALCOGENIDES
CHARGE CARRIERS
CHEMICAL BONDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CHARGES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
GAMMA RADIATION
HOLES
HYDROGEN
INTERFACES
IONIZING RADIATIONS
LEPTONS
MOS TRANSISTORS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS