The role of hydrogen in radiation-induced defect formation in polysilicon gate MOS devices
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7202035
The role of hydrogen in the generation of radiation-induced interface-trap and oxide-trapped charge in MOS polysilicon gate capacitors has been investigated. The concentration of radiation-induced interface-trap and oxide-trapped charge measured both immediately after irradiation and after postirradiation anneal increases if high temperature anneals are performed in hydrogen. The authors analyzed these results in the context of several models of interface-trap and oxide-trapped charge formation. The mutual increase in the concentration of oxide-trapped charge and the early-time (1 msec to 10 sec) component of interface-trap charge with the amount of hydrogen used during processing suggests that the breaking of Si-H or Si-OH bonds may be responsible for much of the defect formation at or near the silicon/silicon dioxide interface.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 7202035
- Report Number(s):
- CONF-8707112-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
25 ENERGY STORAGE
250400 -- Energy Storage-- Capacitor Banks
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
656001 -- Condensed Matter Physics-- Solid-State Plasma
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CAPACITORS
CHALCOGENIDES
DESIGN
ELECTRICAL EQUIPMENT
EQUIPMENT
EQUIPMENT INTERFACES
HEAT TREATMENTS
HIGH TEMPERATURE
HYDROGEN ADDITIONS
INSTABILITY
IRRADIATION
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PLASMA INSTABILITY
PLASMA MACROINSTABILITIES
RADIATION EFFECTS
RADIOINDUCTION
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRANSISTORS
TRAPPED-PARTICLE INSTABILITY
250400 -- Energy Storage-- Capacitor Banks
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
656001 -- Condensed Matter Physics-- Solid-State Plasma
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CAPACITORS
CHALCOGENIDES
DESIGN
ELECTRICAL EQUIPMENT
EQUIPMENT
EQUIPMENT INTERFACES
HEAT TREATMENTS
HIGH TEMPERATURE
HYDROGEN ADDITIONS
INSTABILITY
IRRADIATION
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PLASMA INSTABILITY
PLASMA MACROINSTABILITIES
RADIATION EFFECTS
RADIOINDUCTION
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRANSISTORS
TRAPPED-PARTICLE INSTABILITY