On the suitability of non-hardened high density SRAMs for space applications

Conference · Sun Dec 01 04:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5825865

Koga, R; Crain, W R; Crawford, K B; Lau, D D; Pinkerton, S D ^[1]; Yi, B K ^[2]; Chitty, R ^[3]

---

1. Space and Environment Technology Center, Aerospace Corp., El Segundo, CA (US)
2. Fairchild Space Co., Germantown, MD (United States)
3. CTA, Rockville, MD (US)

This paper reports on several non-radiation-hardened high density static RAMs (SRAMs) that were tested for susceptibility to single event upset (SEU) and latchup. Test results indicate that at present only a few such device types are suitable for use in space applications. Several additional factors such as susceptibility to multiple-bit upsets and to radiation induced permanent damage need to be taken into consideration before these device types can be recommended. One non-hardened SRAM device type has recently been used on a low-Earth orbit satellite, enabling the upset rate measured in space to be compared to that predicted from ground-based testing.

• OSTI ID: 5825865
• Report Number(s): CONF-910751--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
661320 -- Auroral
Ionospheric
& Magnetospheric Phenomena-- (1992-)
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRONIC CIRCUITS
HARDENING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SATELLITES
SPACE
TESTING
USES
VARIATIONS