Low threshold, optically pumped, room-temperature laser oscillation at 0. 88. mu. m from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge-coated Si substrates

Journal Article · Mon Jun 23 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96812· OSTI ID:5816457

van der Ziel, J P; Dupuis, R D; Bean, J C

Low threshold, optically pumped laser oscillation has been obtained using AlGaAs/GaAs double heterostructures grown on Ge-coated Si substrates. The optical pump power for threshold is comparable to similar heterostructures grown on GaAs substrates. Between 20 and 85 /sup 0/C the threshold temperature dependence is exponential with T/sub 0/ = 160 /sup 0/C. The laser wavelength and the peak of the spontaneous emission of lasers grown on Si substrates are shifted to longer wavelengths relative to bulk GaAs. This results largely from the strain in the plane of the epilayer produced by the difference in the thermal contraction of the layers and the Si substrate on cooling from the growth temperature.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5816457
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:25
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
OPERATION
OPTICAL PUMPING
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
GERMANIUM
HETEROJUNCTIONS
INFRARED RADIATION
LAYERS
SILICON
STRAINS
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
METALS
PNICTIDES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
420300* - Engineering- Lasers- (-1989)