Observation of mid-gap states in GaN with optical-isothermal capacitance transient spectroscopy
Conference
·
OSTI ID:581104
- Electrotechnical Lab., Tsukuba (Japan)
- Nagoya Univ., Chikusa (Japan). Dept. of Electronics Engineering
Optical-isothermal capacitance transient spectroscopy (O-ICTS) was used to distinguish the deep levels which occur in unintentionally doped n-type GaN by means of their characteristic optical cross section. GaN grown by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) were /compared. Correspondence between optical and thermal emission characteristics of previously discovered levels, E2 ({approximately}E{sub c}-0.55 eV) and E4 ({approximately}E{sub c}-1.0 eV), were clearly determined by observing their sequential appearance in the ICTS spectra. Whether by thermal or optical simulation, the emission from E4 was found to be broad in nature; it is consequently believed to involve a defect. The total measured concentration of deep levels, including a prominent level which photoionizes in the range 2.5 to 3.0 eV below the conduction band, is greater in the GaN grown by MOVPE than by HVPE that was tested.
- OSTI ID:
- 581104
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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