Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394959

Perkins, N R; Horton, M N; Kuech, T F ^[1]; Bandic, Z Z; McGill, T C ^[2]

---

1. Univ. of Wisconsin, Madison, WI (United States)
2. California Inst. of Tech., Pasadena, CA (United States). Dept. of Applied Physics

A major limitation of the current technology for GaN epitaxy is the availability of suitable substrates matched in both lattice constant and thermal expansion coefficient. One alternative for the development of GaN substrates rests in the application of halide vapor phase epitaxy (HVPE) to produce GaN films at high growth rates. In this paper, the authors describe the growth of thick GaN films via the HVPE technique on (0001) sapphire and (111) Si substrates. At a temperature of 1,030 C, films are grown at rates between 70 and 90 {micro}m/hr, yielding total thicknesses exceeding 200 {micro}m on sapphire. DCXRD measurements of GaN/sapphire indicate FWHM values less than 220 arcsec on 180 {micro}m thick films. Room temperature PL measurements of GaN/sapphire indicate strong emission at 3.41 eV, with a FWHM value of 65 meV. Moreover, no detectable deep level emission was found in room temperature PL measurement. Under optimized conditions, films are morphologically smooth and optically clear. The GaN morphology appears to be a strong function of the initial nucleation conditions, which in turn are strongly affected by the partial pressure of GaCl. HVPE growth on (111) Si substrates is accomplished using an AlN MOVPE buffer layer.

• OSTI ID: 394959
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
AMMONIA
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
GALLIUM CHLORIDES
GALLIUM NITRIDES
HYDROGEN
LASERS
LIGHT EMITTING DIODES
MORPHOLOGY
NITROGEN
NUCLEATION
PARTIAL PRESSURE
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION