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Title: Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer

Abstract

GaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH{sub 4} gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH{sub 3}. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Chonbuk National Univ., Chonju (KR)
Sponsoring Org.:
Ministry of Education of Korea
OSTI Identifier:
20104537
Resource Type:
Conference
Resource Relation:
Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MICROSTRUCTURE; OPTICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; THIN FILMS; X-RAY DIFFRACTION; PHOTOLUMINESCENCE; ELECTRON MICROSCOPY; EXPERIMENTAL DATA

Citation Formats

Lim, K.Y., Lee, K.J., Park, C.I., Kim, K.C., Choi, S.C., Lee, W.H., Suh, E.K., Yang, G.M., and Nahm, K.S. Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer. United States: N. p., 2000. Web.
Lim, K.Y., Lee, K.J., Park, C.I., Kim, K.C., Choi, S.C., Lee, W.H., Suh, E.K., Yang, G.M., & Nahm, K.S. Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer. United States.
Lim, K.Y., Lee, K.J., Park, C.I., Kim, K.C., Choi, S.C., Lee, W.H., Suh, E.K., Yang, G.M., and Nahm, K.S. Sat . "Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer". United States. doi:.
@article{osti_20104537,
title = {Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer},
author = {Lim, K.Y. and Lee, K.J. and Park, C.I. and Kim, K.C. and Choi, S.C. and Lee, W.H. and Suh, E.K. and Yang, G.M. and Nahm, K.S.},
abstractNote = {GaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH{sub 4} gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH{sub 3}. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 2000},
month = {Sat Jul 01 00:00:00 EDT 2000}
}

Conference:
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