Microstructure of GaN epitaxy on SiC using AlN buffer layers

Journal Article · Mon Jul 17 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114645· OSTI ID:76392

Ponce, F A; Krusor, B S ^[1]; Major, Jr, J S; Plano, W E; Welch, D F ^[2]

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1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 (United States)
2. SDL, Inc., 80 Rose Orchard Way, San Jose, California 95134 (United States)

The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 76392
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 67; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
BUFFERS
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
EPITAXY
GALLIUM NITRIDES
MICROSTRUCTURE
MORPHOLOGY
RESIDUAL STRESSES
SILICON CARBIDES
STRAINS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION