Epitaxial growth of SiC on sapphire substrates with an AlN buffer layer

Journal Article · Mon Jan 31 23:00:00 EST 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2054756· OSTI ID:7236478

Sywe, B S; Yu, Z J; Burckhard, S; Edgar, J H ^[1]; Chaudhuri, J ^[2]

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1. Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
2. Wichita State Univ., KS (United States). Dept. of Mechanical Engineering

SiC is a rapidly developing semiconductor suitable for high temperature, high frequency, and high power electronics. In this work, Al coated sapphire (0001) has been developed as a new substrate for SiC thin film epitaxy. By predepositing a thin AlN buffer layer, the nucleation and adherence of the SiC film are vastly improved. X-ray diffraction and electron channeling patterns have confirmed that single-crystal 6H-SiC was obtained on AlN/Al[sub 2]O[sub 3] substrates. The undoped SiC film showed n-type electrical conductivity. The strain in the epilayer is small and the dislocation density is comparable to that in SiC grown on Si(111).

• OSTI ID: 7236478
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:2; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
ADHESION
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
CARBIDES
CARBON COMPOUNDS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SILICON CARBIDES
SILICON COMPOUNDS