Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

Journal Article · · Journal of Crystal Growth
 [1];  [2];  [2]
  1. Georgia Institute of Technology, Atlanta, GA (United States); OSTI
  2. Georgia Institute of Technology, Atlanta, GA (United States)
+ Show Author Affiliations

The unintentional impurity incorporation in GaN epitaxial layers impacts the electrical conductivity and optical properties of the films grown by metalorganic chemical vapor deposition (MOCVD). It is critical to control impurity-related states for device structure development. The aim of this work is to contribute to the understanding of the reasons for the presence of certain background impurities. In this paper, the unintentional impurity incorporation of carbon, hydrogen, oxygen, and silicon in undoped (u-) GaN films grown by low-pressure MOCVD were studied. Background impurity concentrations were evaluated by secondary ion mass spectroscopy (SIMS) to optimize growth parameters including V/III ratio, growth temperature (Tg), growth pressure (Pg), and gallium (Ga) precursors of trimethylgallium (TMG) or triethylgallium (TEG). Unintentional [C] and [Si] incorporations are found to be highly dependent on the growth parameters. Further, for the same growth conditions, u-GaN films grown with a TEG precursor exhibited a lower background concentration of C compared to that of GaN grown with TMG. However, the lowest background [C] achieved was grown with TMG using optimized conditions and exhibited [C]<4×1015 cm-3 which was at the detection limit of the SIMS measurement. These results were measured for a u-GaN layer grown with TMG at 200 Torr, 1030°C, and a V/III of 3700. The lowest background [Si] of 4×1015 cm-3 was achieved by growing with TMG at 200 Torr, 1000°C, and V/III of 650.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE Office of Science (SC); National Aeronautics and Space Administration (NASA); US Army Research Office (ARO); National Science Foundation (NSF)
Grant/Contract Number:
SC0019133
OSTI ID:
2420978
Alternate ID(s):
OSTI ID: 1902457
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 602; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (25)

Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures journal January 2016
Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence journal May 2020
High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation journal May 2021
A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAs journal May 1988
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN journal July 2002
Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design journal December 2004
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition journal March 2006
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition journal December 2016
Activation energies of Si donors in GaN journal May 1996
Comparison of trimethylgallium and triethylgallium for the growth of GaN journal December 1997
Field emission from GaN surfaces roughened by hydrogen plasma treatment journal May 2001
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates journal July 2002
Impact of carbon on trap states in n -type GaN grown by metalorganic chemical vapor deposition journal January 2004
Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors journal June 2010
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition journal September 2016
Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition journal June 2016
Doping properties of C, Si, and Ge impurities in GaN and AlN journal October 1997
Interactions of hydrogen with native defects in GaN journal October 1997
Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation journal October 2019
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction journal October 2020
Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method journal June 2021
Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays conference March 2021
Design of Ion-Implanted Junction Termination Extension for Vertical GaN Pin Rectifiers journal September 2020
Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy journal January 1999
Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium journal January 2021

Figures / Tables (9)

Figure 1(p. 6)figure Figure 1
Figure 2(p. 8)figure Figure 2
Figure 3(p. 9)figure Figure 3
Figure 4(p. 10)figure Figure 4
Figure 5(p. 10)figure Figure 5
Figure 6(p. 11)figure Figure 6
Figure 7(p. 12)figure Figure 7
Figure 8(p. 14)figure Figure 8
Figure 9(p. 15)figure Figure 9

Similar Records

Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
Journal Article · Thu Jan 14 23:00:00 EST 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:22489769
Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint
Conference · Mon Oct 01 00:00:00 EDT 2001 · OSTI ID:15000022
Evaluation of NF3 versus Dimethylhydrazine as N sources for GaAsN: Preprint
Conference · Mon Oct 01 00:00:00 EDT 2001 · OSTI ID:15000009

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
A3. Low pressure metalorganic vapor phase epitaxy
A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting III-V materials