Analysis of the carbon-related 'blue' luminescence in GaN

Journal Article · Fri Sep 24 04:00:00 EDT 2004 · Journal of Applied Physics

OSTI ID:841111

Armitage, R ^[1]; Yang, Q; Weber, E R

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1. LBNL Library

The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C{sub Ga}-C{sub N} deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm{sup 2}) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic Energy Sciences; Air Force Office of Scientific Research Contract F49620-01-1-0151 (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 841111
• Report Number(s): LBNL--56925
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 97
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COULOMB FIELD
DIFFUSION
EPITAXY
EXCITATION
LUMINESCENCE
PHOTOLUMINESCENCE
RECOMBINATION
TEMPERATURE DEPENDENCE
TRANSIENTS
VAPOR PHASE EPITAXY