2.2 eV luminescence in GaN
Book
·
OSTI ID:395015
- Technische Univ. Muenchen, Garching (Germany). Physik Dept.
The yellow luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.
- OSTI ID:
- 395015
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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