Growth of GaN without yellow luminescence
Book
·
OSTI ID:395016
- Northwestern Univ., Evanston, IL (United States)
The authors report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2 eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced by growing GaN under Ga-rich condition or doping GaN with Ge or Mg.
- OSTI ID:
- 395016
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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