TOF-LEIS characterization and growth of GaN thin films grown with ECR and NH{sub 3}

Book · Wed Dec 31 04:00:00 EST 1997

OSTI ID:581035

Kim, E; Bensaoula, A; Rusakova, I ^[1]; Shultz, A; Waters, K ^[2]

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1. Univ. of Houston, TX (United States)
2. Ionwerks, Houston, TX (United States)

GaN thin films were grown on various substrates by GSMBE using ECR nitrogen and ammonia. The growth of GaN was monitored by real time analysis, time of flight low energy ion scattering (TOF-LEIS) and RHEED. Growth of GaN on GaAs, ZnO, Ge and Al{sub 2}O{sub 3} was investigated. The substrates` surfaces were analyzed during pre-growth annealing and during GaN growth. The removal of surface contaminants and the modification of the surface stoichiometry from these surfaces are presented. GaN films on sapphire (0001) grown under different conditions were examined real time by low energy ion scattering mass spectroscopy of recoiled ion (MSRI) and the relationship between the in-situ surface composition with ex-situ photoluminescence measurement results are discussed.

• OSTI ID: 581035
• Report Number(s): CONF-961202--; ISBN 1-55899-353-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXPERIMENTAL DATA
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
SUBSTRATES
SURFACE TREATMENTS