Epitaxial growth of GaN films produced by ECR-assisted MBE

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:394939

Moustakas, T D ^[1]

---

1. Boston Univ., MA (United States)

The epitaxial growth of wurtzite and zincblende GaN on (0001) sapphire and (001) Si by the Electron Cyclotron Resonance-assisted Molecular Beam Epitaxy (ECR-MBE) method is discussed. The authors show that films can be grown in the layer-by-layer mode when growth occurs in Ga-rich regime. Surface roughening mechanisms are addressed. The similarity of photoluminescence data of Mg-doped wurtzite GaN films with those of undoped zincblende GaN films suggests that Mg doping facilitates the formation of stacking faults in the wurtzite structure which are nucleation sites for zincblende domains.

• OSTI ID: 394939
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRON CYCLOTRON-RESONANCE
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
GALLIUM NITRIDES
MICROWAVE RADIATION
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PHOTOLUMINESCENCE
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION