Optical properties of wurtzite- and zincblende-GaN films grown by RF plasma-MBE

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:395003

Semendy, F; Bambha, N ^[1]; Kim, J G; Liu, H; Park, R M ^[2]

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1. Army Research Lab., Fort Belvoir, VA (United States)
2. Univ. of Florida, Gainesville, FL (United States). Dept. of Material Science and Engineering

Both wurtzite- and zincblende-GaN films have been grown on sapphire and MgO substrates, respectively, and examined by photoluminescence and x-ray analysis. GaN films were grown on suitably prepared Al{sub 2}O{sub 3} and MgO substrates by molecular beam epitaxy employing a rf plasma discharge, nitrogen free radical source. The wurtzite- and zincblende-GaN films exhibited dominant near band-edge emission, the nature of which will be compared and contrasted for both phases in this paper. X-ray diffraction data for both phases is also discussed.

• OSTI ID: 395003
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
GALLIUM NITRIDES
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PLASMA
RF SYSTEMS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
X-RAY DIFFRACTION