Defect microstructure of thin wurtzite GaN films grown by MBE
- Univ. of Illinois, Urbana, IL (United States)
- Arizona State Univ., Tempe, AZ (United States)
Thin films of wurtzite GaN have been grown by molecular beam epitaxy on 6H SiC (basal plane), Si{l_brace}111{r_brace} and sapphire (c-plane) substrates with and without various buffer layers. The defect microstructure of the films and the substrate/buffer/GaN interfacial quality have been characterized by cross-sectional transmission electron microscopy. The morphology was dominated by threading defects that originated at the substrate/buffer and/or buffer/film interfaces. Typical defect densities dropped rapidly with distance from the substrate but remained {approximately} 10{sup 8}--10{sup 9}/cm{sup 2}, depending on the particular substrate, for film thicknesses approaching one micron or more. The best quality films were grown at 770 C on sapphire with AlN buffer layers, and had X-ray rocking curve full-width at half-maximum values of {approximately} 55arc-sec.
- OSTI ID:
- 394948
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ALUMINIUM NITRIDES
CRYSTAL DEFECTS
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
ENERGY BEAM DEPOSITION
GALLIUM NITRIDES
INTERFACES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PLASMA
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION