ECR-MBE and GSMBE of gallium nitride on Si(111)

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394943

Rossner, U; Rouviere, J L; Bourret, A; Barski, A ^[1]

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1. CEA/Grenoble (France). Dept. de Recherche Fondamentale sur la Matiere Condensee

Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium. By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640 C while three dimensional growth occurred in GSMBE configuration in the temperature range from 640 to 800 C. Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples growth by GSMBE at high temperature (800 C). This could be explained by the increase of grain dimensions (up to 0.3--0.5 {micro}m) observed in samples growth by GSMBE at 800 C.

• OSTI ID: 394943
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
AMMONIA
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
CRACKING
DISLOCATIONS
ELECTRON CYCLOTRON-RESONANCE
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
GRAIN SIZE
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NITROGEN
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY