Growth of cubic GaN by MBE and its properties

Conference · Wed Dec 31 04:00:00 EST 1997

OSTI ID:580990

Yoshida, S; Okumura, H; Hacke, P; Balakrishnan, K ^[1]; Feuillet, G ^[2]

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1. Electrochemical Lab., Tsukuba, Ibaraki (Japan)
2. CEA Centre de Grenoble (France)

Molecular bean epitaxy (MBE) technique is a useful method to grow III-V nitrides, especially those having a metastable crystal structure, like cubic GaN (c-GaN), because of the capability of in situ observation of growing surfaces and its non-equilibrium growth mechanism. The authors have grown c-GaN on GaAs and 3C-SiC substrates by gas source MBE using dimethylhydrazine or activated nitrogen beam as an N source, and measured their luminescent and optical properties. This paper summarizes the MBE growth and properties of c-GaN, comparing with those of hexagonal one, and the control of the crystal structures is discussed in terms of growth method, orientation of substrate surfaces and growth conditions.

• OSTI ID: 580990
• Report Number(s): CONF-961202--; ISBN 1-55899-353-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
SILICON CARBIDES