Surface reconstructions and III-V stoichiometry: The case of cubic and hexagonal GaN
Book
·
OSTI ID:581017
- Electrotechnical Lab., Tsukuba, Ibaraki (Japan)
Surface reconstructions for MBE grown GaN are identified. Different cases are considered according to the type of substrate or crystal symmetry and surface phase diagrams are obtained. Through different examples, it is shown how growth monitoring can be efficiently achieved through the use of surface reconstructions. Finally, from the observation that a residual arsenic overpressure in the MBE chamber changes the surface reconstructions of cubic (001) GaN grown onto 3C-SiC (001) substrates to that commonly observed for GaN growth on (001) GaAs, it is proposed that arsenic might be a surfactant for nitride growth.
- OSTI ID:
- 581017
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth of cubic GaN by MBE and its properties
Arsenic mediated reconstructions on cubic (001) GaN
Anti-phase domains in cubic GaN
Conference
·
Tue Dec 30 23:00:00 EST 1997
·
OSTI ID:580990
Arsenic mediated reconstructions on cubic (001) GaN
Journal Article
·
Fri Jan 31 23:00:00 EST 1997
· Applied Physics Letters
·
OSTI ID:467159
Anti-phase domains in cubic GaN
Journal Article
·
Wed Dec 14 23:00:00 EST 2011
· Journal of Applied Physics
·
OSTI ID:22038814