Anti-phase domains in cubic GaN
- University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany)
- University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany)
- University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany)
- Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)
The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.
- OSTI ID:
- 22038814
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 12; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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