Arsenic mediated reconstructions on cubic (001) GaN
- Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305 (Japan)
The 4{times}1 (respectively 1{times}1) (001) GaN surfaces obtained when molecular-beam-epitaxy (MBE) growth is carried out on (001) cubic SiC were exposed to an As background pressure in the MBE chamber: The reconstructions rapidly and irreversibly changed to 2{times}2 [respectively {ital c}(2{times}2)] as usually observed for GaN growth on (001) GaAs. The usual reversible 2{times}2/{ital c}(2{times}2) transitions were consequently observed when bringing the Ga flux up or down. The respective positions for the 4{times}1/1{times}1 and 2{times}2/{ital c}(2{times}2) transitions were worked out as a function of the growth parameters. These observations indicate that the 2{times}2 and {ital c}(2{times}2) GaN surface reconstructions are mediated by As atoms which we tentatively assign to a surfactant effect. A simple structural model involving As dimers is proposed that accounts for Ga coverages of 0.5 and 1 monolayer for the 2{times}2 and {ital c}(2{times}2) growth regimes, respectively. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 467159
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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