Growth of cubic GaN on (001) GaAs

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394927

Brandt, O; Yang, H; Ploog, K H ^[1]; Trampert, A ^[2]

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1. Paul-Drude-Inst. fuer Festkoerperelektronik, Berlin (Germany)
2. Max-Planck-Inst. fuer Festkoerperforschung, Stuttgart (Germany)

The authors present a study of the growth of cubic GaN films on (001) GaAs by molecular beam epitaxy. The investigations focus on the nucleation stage as well as on the subsequent growth of GaN. The phenomenon of epitaxial growth at this extreme mismatch (20%) is demonstrated to arise from a coincidence lattice between GaAs and GaN. The presence of a high-density of stacking faults in the GaN layer is explained within this understanding as being a natural consequence of the coalescence of perfectly relaxed nuclei. The authors furthermore analyze the growth kinetics of GaN via the surface reconstruction transitions observed upon an impinging Ga flux, from which they obtain both the desorption rate of Ga as well as the diffusion coefficient of Ga adatoms on the Ga-stabilized GaN surface. The diffusivity of Ga is found to be very low at the growth temperatures commonly used during molecular beam epitaxy, which provides an explanation for the microscopic surface roughness observed on the samples.

• OSTI ID: 394927
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
DISLOCATIONS
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM NITRIDES
GRAIN SIZE
KINETICS
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
NUCLEATION
ORIENTATION
SEMICONDUCTOR MATERIALS
STACKING FAULTS
SUBSTRATES