Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE
- California Univ., Parlier, CA (United States). Kearney Agricultural Center
- Sandia National Labs., Albuquerque, NM (United States)
High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on (001) GaAs substrates by plasma- assisted molecular-beam-epitaxy. The rf plasma source was used to promote chemically active nitrogen. The layer quality was shown to depend on growth conditions (Ga flux and N{sub 2} flow for fixed rf power). The best quality of GaN layers was achieved by ``stoichiometric`` growth; Ga-rich layers contain a certain amount of the wurtzite phase. GaN layers contain a high density of stacking faults which drastically decreases toward the GaN surface. Stacking faults are anisotropically distributed in the GaN layer; the majority intersect the interface along lines parallel to the ``major flat`` of the GaAs substrate. This correlates well with the observed anisotropy in the intensity distribution of x-ray reflexions. Formation of stacking faults are often associated with atomic steps at the GaN- GaAs interfaces.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000; AC03-76SF00098
- OSTI ID:
- 459985
- Report Number(s):
- SAND--96-2037C; CONF-961202--89; ON: DE97004371
- Country of Publication:
- United States
- Language:
- English
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