Epitaxial integration of superconducting nitrides with cubic GaN

Cresswell, Zachary Earl; Buturlim, Volodymyr Borysovych; Regmi, Sabin; Vallejo, Kevin Daniel; Fessler, Nicole; Garrett, Trent; Bawane, Kaustubh Krishna; Kamboj, Anshul; Simmonds, Paul J.; Kombaiah, Boopathy; Gofryk, Krzysztof; May, Brelon James

doi:10.1063/5.0250514

Epitaxial integration of superconducting nitrides with cubic GaN

Journal Article · Thu Mar 06 00:00:00 EST 2025 · APL Materials

DOI:https://doi.org/10.1063/5.0250514· OSTI ID:2528118

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Idaho National Laboratory (INL), Idaho Falls, ID (United States)
Idaho National Laboratory (INL), Idaho Falls, ID (United States); Boise State University, ID (United States)
Tufts University, Medford, MA (United States)

Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.

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Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: NSF Graduate Research Fellowship Program (GRFP); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 2528118

Alternate ID(s):: OSTI ID: 2583939

Report Number(s):: INL/JOU--25-84949-Rev000

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 3 Vol. 13; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Epitaxial integration of superconducting nitrides with cubic GaN

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