Growth of AlGaAsSb/GaAsSb monolithic, cascade solar cells
Thesis/Dissertation
·
OSTI ID:5803777
Modeling has shown that the optimum bandgaps for two-junction, monolithic, cascade solar cells are 1.8 and 1.2 eV for cells intended for the high temperature environment found in terrestrial 400- to 1000-sun concentrator systems. These values can be obtained employing Al/sub 0/ /sub 44/Ga/sub 0/ /sub 56/As/sub 0/ /sub 87/Sb/sub 0/ /sub 13/ for the high- and low- bandgap junctions, respectively, at the same lattice constant. Using these alloys, photojunctions were developed; with Al/sub 0/ /sub 44/Ga/sub 0/ /sub 56/As/sub 0/ /sub 87/Sb/sub 0/ /sub 13/ tunnel junctions as cell interconnects, cascade structures have been grown by liquid phase epitaxy which show voltage addition for the two photojunctions. Measured conversion efficiencies were less than or equal to 2%, far short of the 30% goal described by the models. The cell shortcomings have three sources: 1) there is a 1% lattice mismatch between GaAs substrates and GaAs/sub 0/ /sub 87/Sb/sub 0/ /sub 13/, low bandgap junctions; 2) the required AlGaAsSb compositions are near a miscibility gap, resulting in questionable material homogeneity and difficult crystal nucleation; these problems are manifested by the appearance of a second, Sb-rich solid phase in x-ray diffraction spectra and poor growth reproducibility and morphology; and 3) the heavy Ge doping in the p/sup +/ tunnel-junction layers contracts the lattice constant, impeding lattice matching to bottom cells, and results in second phase formation observed by x-ray diffraction.
- OSTI ID:
- 5803777
- Country of Publication:
- United States
- Language:
- English
Similar Records
Recent developments for the AlGaAsSb cell
Development of high-efficiency-cascade solar cells. Technical progress report No. 5, July 1, 1981-December 31, 1981
Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP
Conference
·
Wed Sep 01 00:00:00 EDT 1982
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5460689
Development of high-efficiency-cascade solar cells. Technical progress report No. 5, July 1, 1981-December 31, 1981
Technical Report
·
Thu Dec 31 23:00:00 EST 1981
·
OSTI ID:5357547
Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP
Journal Article
·
Wed Jun 15 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:20711759
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
CASCADE SOLAR CELLS
CRYSTAL DOPING
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
GRADED BAND GAPS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
CASCADE SOLAR CELLS
CRYSTAL DOPING
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
GRADED BAND GAPS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT